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  Datasheet File OCR Text:
 CMBT2907
PNP Silicon Planar Epitaxial Transistors
Pin configuration: 1. BASE 2. EMITTER 3. COLLECTOR 3
1
2
SOT-23 SMD Package Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise) DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power dissipation up to Tamb = 25 oC Storage Temperature Junction Temperature DC Current Gain
-VCE = 10V -IC = 500mA
Unit: mm
SYMBOL -VCEO -VCBO -VEBO -IC Ptot Tstg Tj hFE toff fT
CMBT2907 40 60 5.0 600 250 -55 to +150 150 > 30 < 100 > 200
CMBT2907A 60 60 5.0
UNITS V mA mW
o
C
> 50 ns MHz
Turn-off switching time
-ICon = 150 mA; -IBon = IBoff = 15 mA
Transition frequency at f = 100 MHz
-IC = 50 mA; -VCE = 20 V
Thermal Characteristics Junction to Ambient in free air
Rth(j-a)
500
K/W
Electrical Characteristics (at Ta=25 oC unless otherwise specified) CONDITIONS DESCRIPTION SYMBOL IE = 0, -VCB = 50V -ICBO Collector Cut Off Current -ICBO IE = 0, -VCB = 50V, Tj=125oC -VEB = 0.5V, -VCE = 30V -ICEX -VEB = 3V, -VCE = 30V -IBEX Base Current w/reverse biased emitter junction Saturation Voltages -VCE(Sat) -IC = 150mA, -IB = 15mA -VBE(Sat) -VCE(Sat) -IC = 500mA, -IB = 50mA -VBE(Sat) -V(BR)CBO Open emitter; -IC= 10uA, IE= 0 Collector-base breakdown voltage -V(BR)CEO Open base; -IC= 10mA, IB= 0 Collector-emitter breakdown voltage Emitter-base breakdown voltage -V(BR)EBO Open collector; -IE= 10uA, IC= 0
CMBT2907
CMBT2907A
< 20 < 20 < 50 < 50 < 0.4 < 1.3 < 1.6 < 2.6 > 60 > 40 > 5.0
< 10 < 10
UNITS nA uA nA
V
> 60
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CMBT2907
PNP Silicon Planar Epitaxial Transistors
DC Current Gain hFE
-VCE = 10V, -IC = 0.1mA -VCE = 10V, -IC = 1mA -VCE = 10V, -IC = 10mA -VCE = 10V, -IC = 150mA -VCE = 10V, -IC = 500mA > 35 > 50 > 75 > 30 > 200 < 8.0 < 30 > 75 > 100 > 100 > 50
100 to 300
Transition Frequency at f = 100 MHz Output Capacitance at f = 1 MHz Input Capacitance at f = 1 MHz Switching times (between 10% and 90%)
Turn-on time when switched to delay time rise time turn on time (td + tr) Turn-off time when switched from to cut-off with + IBM = 15 mA storage time fall time turn off time (ts + tf)
fT CO Ci
-VCE=20V, -IC=50mA -VCB = 10V, IE = Ie = 0 -VEB = 2V, IC = Ic = 0 -IC = 150mA, -IB = 15mA, VCC = 30V
MHZ pF pF
td tr ton
-IC = 150mA, -IB = 15mA, VCC = 6V
< 10 < 40 < 45
ns
ts tf toff
< 80 < 30 < 100
ns
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